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Manufacturer Part #

IRFS4127TRLPBF

Single N-Channel 200 V 22 mOhm 100 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2437
Product Specification Section
Infineon IRFS4127TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 100nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 72A
Turn-on Delay Time: 17s
Turn-off Delay Time: 56ns
Rise Time: 18ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Input Capacitance: 5380pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$848.00
USD
Quantity
Unit Price
800
$1.06
1,600
$1.05
3,200
$1.04
4,000+
$1.03
Product Variant Information section