text.skipToContent text.skipToNavigation

Manufacturer Part #

IRFSL3306PBF

IRFSL3306 Series 60V 120A 230W 4.2mOhm TH Single N-Channel MOSFET TO-262-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFSL3306PBF - Technical Attributes
Attributes Table
Product Status: Obsolete
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 85nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 160A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 40ns
Rise Time: 76ns
Fall Time: 77ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 4520pF
Series: HEXFET
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$955.00
USD
Quantity
Unit Price
50
$1.01
200
$0.98
750
$0.955
2,000
$0.935
5,000+
$0.905
Product Variant Information section