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Manufacturer Part #

IRLL014NTRPBF

Single N-Channel 55V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223

Product Specification Section
Infineon IRLL014NTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.28Ω
Rated Power Dissipation: 2.1W
Qg Gate Charge: 14nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 2.8A
Turn-on Delay Time: 5.1ns
Turn-off Delay Time: 14ns
Rise Time: 4.9ns
Fall Time: 2.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Advanced Process Technology
Height - Max: 1.8mm
Length: 6.7mm
Input Capacitance: 230pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$317.50
USD
Quantity
Unit Price
2,500
$0.127
7,500
$0.125
12,500
$0.124
25,000
$0.122
50,000+
$0.12