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Infineon | IRLR2908TRPBF

Manufacturer Part #

IRLR2908TRPBF

Single N-Channel 80 V 30 mOhm 33 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLR2908TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 120W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 39A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 36ns
Rise Time: 95ns
Fall Time: 55ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: Advanced Process Technology
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1890pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$780.00
USD
Quantity
Unit Price
2,000
$0.39
4,000
$0.385
6,000
$0.38
10,000+
$0.37
Product Variant Information section