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Manufacturer Part #
IRLR6225TRPBF
Single N-Channel 20 V 4 mOhm 48 nC HEXFET® Power Mosfet - SOT-23
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1643 | ||||||||||
Product Specification Section
Infineon IRLR6225TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
Part Status:
Obsolete
Obsolete
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLR6225TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irlr6225trpbf-infineon-3099175
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLR6225TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irlr6225trpbf-infineon-3099175
Infineon IRLR6225TRPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 4mΩ |
| Rated Power Dissipation: | 63W |
| Qg Gate Charge: | 48nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 9.7ns |
| Turn-off Delay Time: | 63ns |
| Rise Time: | 37ns |
| Fall Time: | 52ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.8V |
| Input Capacitance: | 3770pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
50
USA:
50
Product Variant Information section
Available Packaging
Package Qty:
2000 per
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount