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Infineon | IRLR6225TRPBF

Manufacturer Part #

IRLR6225TRPBF

Single N-Channel 20 V 4 mOhm 48 nC HEXFET® Power Mosfet - SOT-23

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLR6225TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 4mΩ
Rated Power Dissipation: 63W
Qg Gate Charge: 48nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 100A
Turn-on Delay Time: 9.7ns
Turn-off Delay Time: 63ns
Rise Time: 37ns
Fall Time: 52ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.8V
Input Capacitance: 3770pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$770.00
USD
Quantity
Unit Price
2,000
$0.385
4,000
$0.38
8,000
$0.375
10,000+
$0.37
Product Variant Information section