text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. ISC080N10NM6ATMA1

Infineon | ISC080N10NM6ATMA1

Manufacturer Part #

ISC080N10NM6ATMA1

ISC080N Series N-Channel 100 V 13A 3W Surface Mount MOSFET PowerTDFN-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2130
Product Specification Section
Infineon ISC080N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 8.06mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 6.4ns
Turn-off Delay Time: 10.7ns
Rise Time: 1.5ns
Fall Time: 4.3ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 1400pF
Series: OptiMOS 6
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
100
USA:
100
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.48
USD
Quantity
Unit Price
1
$1.48
20
$1.35
100
$1.27
500
$1.20
2,500+
$1.12
Product Variant Information section