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Manufacturer Part #

ISC080N10NM6ATMA1

ISC080N Series N-Channel 100 V 13A 3W Surface Mount MOSFET PowerTDFN-8

Product Specification Section
Infineon ISC080N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 8.06mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 6.4ns
Turn-off Delay Time: 10.7ns
Rise Time: 1.5ns
Fall Time: 4.3ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 1400pF
Series: OptiMOS 6
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
100
USA:
100
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.54
USD
Quantity
Web Price
1
$1.54
20
$1.40
100
$1.32
500
$1.24
2,500+
$1.17