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Référence fabricant
IXFP12N65X2
N-Channel 650 V 12 A 310 mOhm SMT X2-Class HiPerFET Power Mosfet - TO-220AB
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| Nom du fabricant: | Littelfuse - IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Littelfuse - IXYS IXFP12N65X2 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXFP12N65X2&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ixfp12n65x2-littelfuse-ixys-9104323
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXFP12N65X2&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ixfp12n65x2-littelfuse-ixys-9104323
Littelfuse - IXYS IXFP12N65X2 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 310mΩ |
| Rated Power Dissipation: | 180W |
| Qg Gate Charge: | 18.5nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 12A |
| Turn-on Delay Time: | 27ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 26ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 1134pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole