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Manufacturer Part #

MRF13750HR5

MRF13750H Series 50 V 1300 MHz 750 W CW RF Power LDMOS Transistor - NI-1230H-4S

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP MRF13750HR5 - Technical Attributes
Attributes Table
Fet Type: RF Fet
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 105V
Rated Power Dissipation: 1333W
Gate-Source Voltage-Max [Vgss]: 10V
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 1.72V
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$10,836.50
USD
Quantity
Web Price
1
$227.57
2
$224.74
3
$223.11
5
$221.06
10+
$216.73
Product Variant Information section