NDT3055L in Reel by onsemi | Mosfet | Future Electronics
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Référence fabricant

NDT3055L

N-Channel 60 V 0.1Ω SMT Enhancement Mode Field Effect Transistor SOT-223

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2424
Product Specification Section
onsemi NDT3055L - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.1Ω
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 20nC
Style d'emballage :  SOT-223 (TO-261-4, SC-73)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The NDT3055L Part Number is a Logic level N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features:

  • 4 A, 60 V
  • RDS(ON) = 0.100 O @ VGS = 10 V
  • RDS(ON) = 0.120 O @ VGS = 4.5 V
  • High density cell design for extremely lowRDS(ON).
  • High power and current handling capability in a widely used surface mount package

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Voir plus...
Pricing Section
Stock global :
284 000
États-Unis:
284 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
9 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 580,00 $
USD
Quantité
Prix unitaire
4 000
$0.395
8 000+
$0.385