text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. NTJD5121NT1G

onsemi | NTJD5121NT1G

Manufacturer Part #

NTJD5121NT1G

Dual N-Channel 60 V 1.6 Ohm 250 mW Surface Mount Power MOSFET - SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
onsemi NTJD5121NT1G - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.6Ω
Rated Power Dissipation: 250|mW
Qg Gate Charge: 0.9nC
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The NTJD5121NT1G is a part of NTJD5121N series dual P-channel MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.

Features:

  • Low RDS(on)
  • Low Gate Threshold
  • Low Input Capacitance
  • ESD Protected Gate
  • This is a Pb-Free Device

Applications:

  • Low Side Load Switch
  • DC-DC Converters

View the available family of dual P-channel MOSFET

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
43 Weeks
Minimum Order:
30000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,698.00
USD
Quantity
Unit Price
3,000
$0.0587
9,000
$0.0573
15,000
$0.0566
60,000
$0.0549
90,000+
$0.0538
Product Variant Information section