text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. RQ3E120ATTB

ROHM | RQ3E120ATTB

Manufacturer Part #

RQ3E120ATTB

RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM RQ3E120ATTB - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 62nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 140ns
Rise Time: 30ns
Fall Time: 95ns
Gate Source Threshold: 2.5V
Input Capacitance: 3200pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$870.00
USD
Quantity
Unit Price
3,000
$0.29
6,000
$0.285
15,000+
$0.28
Product Variant Information section