Manufacturer Part #
SI7192DP - N-Channel 30 V 1.9 mΩ 104 W TrenchFET GEN III Mosfet - PPAKSO-8
|Standard Pkg:|| |
Product Variant Information section
3000 per Reel
|Drain-to-Source Voltage [Vdss]:||30V|
|Drain-Source On Resistance-Max:||0.0019Ω|
|Rated Power Dissipation:||104|W|
|Qg Gate Charge:||135nC|
|Mounting Method:||Surface Mount|
Features & Applications
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors. Vishay offers the Siliconix PowerPAK Power MOSFET family’s industry low on-resistance breaks the 3 mΩ barrier for 20V and 30V devices in an SO-8 footprint. These PWM-optimized devices feature on-resistance-times-gate-charge products as low as 115.
The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.
The Si7192DP is the first device in a new third-generation TrenchFET power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge (FOM). The Si7192DP, a 30V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. Specifically designed for applications including VRM, POL, Server, and low side DC/DC conversion.
3000 per Reel