text.skipToContent text.skipToNavigation

Manufacturer Part #


SI7192DP - N-Channel 30 V 1.9 mΩ 104 W TrenchFET GEN III Mosfet - PPAKSO-8

Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.0019Ω
Rated Power Dissipation: 104|W
Qg Gate Charge: 135nC
Mounting Method: Surface Mount
Features & Applications

Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors. Vishay offers the Siliconix PowerPAK Power MOSFET family’s industry low on-resistance breaks the 3 mΩ barrier for 20V and 30V devices in an SO-8 footprint. These PWM-optimized devices feature on-resistance-times-gate-charge products as low as 115.

The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.

The Si7192DP is the first device in a new third-generation TrenchFET power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge (FOM). The Si7192DP, a 30V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. Specifically designed for applications including VRM, POL, Server, and low side DC/DC conversion.

Pricing Section
Minimum Order:
Multiple Of:
On Order:
Factory Stock:Factory Stock:
Factory Lead Time:
17 Weeks
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Web Price
Product Variant Information section