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Manufacturer Part #

SI7212DN-T1-GE3

MOSFET 2N-CH 30V 4.9A 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2406
Product Specification Section
Vishay SI7212DN-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 36mΩ
Rated Power Dissipation: 2.6W
Qg Gate Charge: 11nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 6.8A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 30ns
Rise Time: 12ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 600mV
Technology: Si
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
51,000
USA:
51,000
On Order:
0
Factory Stock:Factory Stock:
27,000
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,935.00
USD
Quantity
Unit Price
3,000
$0.645
6,000
$0.64
9,000
$0.635
12,000+
$0.625
Product Variant Information section