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Manufacturer Part #

SI7892BDP-T1-E3

Single N-Channel 30 V 0.0042 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2535
Product Specification Section
Vishay SI7892BDP-T1-E3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.0042Ω
Rated Power Dissipation: 1.8|W
Qg Gate Charge: 40nC
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Features & Applications
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.  The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.The Si7840BDP features a new low thermal resistance PowerPAK® and TrenchFET® Power MOSFET Technology.  This 30V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 4.2 milliohms at a 30-V gate drive voltage. Specifically designed for synchronous rectifiers.
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
33,000
Factory Lead Time:
36 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,020.00
USD
Quantity
Unit Price
3,000+
$1.34
Product Variant Information section