text.skipToContent text.skipToNavigation

Manufacturer Part #

SI9933CDY-T1-GE3

Dual P-Channel 20 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2408
Product Specification Section
Vishay SI9933CDY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.058Ω
Rated Power Dissipation: 3.1|W
Qg Gate Charge: 26nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
10,000
USA:
10,000
60,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$512.50
USD
Quantity
Unit Price
2,500
$0.205
5,000
$0.20
10,000
$0.198
12,500
$0.197
37,500+
$0.193
Product Variant Information section