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Manufacturer Part #

SIA456DJ-T1-GE3

Single N-Channel 200 V 1.38 Ohms Surface Mount Power Mosfet - SC-70-6

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2101
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 1.38Ω
Rated Power Dissipation: 19|W
Qg Gate Charge: 14.5nC
Package Style:  POWERPAK-SC-70-6L
Mounting Method: Surface Mount
Features & Applications
The SIA456DJ-T1-GE3 is a N-Channel 200-V (D-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a PowerPAK SC-70-6L-Single package.

Features:

  • Halogen-free
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK®SC-70 Package
    • Small Footprint Area
    • Low On-Resistance

Applications:

  • Boost Converter for Portable Devices
Pricing Section
Global Stock:
0
USA:
0
108,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,370.00
USD
Quantity
Web Price
3,000
$0.79
6,000+
$0.63
Product Variant Information section