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Manufacturer Part #

SIDR680DP-T1-GE3

Single N-Channel 80 V 2.9 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8DC

Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 1917
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2.9mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 69.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 32.8A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 30ns
Rise Time: 24ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.4V
Input Capacitance: 5150pF
Mounting Method: Surface Mount
Pricing Section
Stock:
6,000
Minimum Order:
3,000
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Total
$4,020.00
USD
Quantity
Web Price
3,000+
$1.34
Product Variant Information section