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Vishay | SIHB6N65E-GE3

Manufacturer Part #

SIHB6N65E-GE3

Single N-Channel 700 V 0.6 Ω 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHB6N65E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 78|W
Qg Gate Charge: 48nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,150.00
USD
Quantity
Unit Price
50
$3.26
150
$3.22
500
$3.18
1,000
$3.15
2,000+
$3.10
Product Variant Information section