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Manufacturer Part #
SIHH068N60E-T1-GE3
600v e Series MOSFET
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SIHH068N60E-T1-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/02/2025 Details and Download
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Active
Active
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Vishay SIHH068N60E-T1-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 68mΩ |
| Rated Power Dissipation: | 202W |
| Qg Gate Charge: | 53nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 34A |
| Turn-on Delay Time: | 56ns |
| Turn-off Delay Time: | 60ns |
| Rise Time: | 148ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +150°C |
| Input Capacitance: | 2650pF |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
3,000+
$2.86
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount