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Manufacturer Part #
SIJH440E-T1-GE3
40 V 200 A 158 W TrenchFET Gen IV N-Channel Power Mosfet - PowerPAK 8 x 8
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Vishay SIJH440E-T1-GE3 - Product Specification
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Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIJH440E-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sijh440e-t1-ge3-vishay-8090504
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIJH440E-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sijh440e-t1-ge3-vishay-8090504
Vishay SIJH440E-T1-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 0.96mΩ |
| Rated Power Dissipation: | 3W |
| Qg Gate Charge: | 279nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 40A |
| Turn-on Delay Time: | 28ns |
| Turn-off Delay Time: | 105ns |
| Rise Time: | 35ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.3V |
| Input Capacitance: | 20330pF |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per Reel
Mounting Method:
Surface Mount