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Manufacturer Part #
SIJH600E-T1-GE3
MOSFET NChannel 60 V 3.3 W 0.92 Ohm TrenchFET Optimized Ratio Switching
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:POWERPAK-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Vishay SIJH600E-T1-GE3 - Product Specification
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Description of Change: To meet increasing demand for Power MOSFET products, Vishay Siliconix is in the transferring process of wafer fabricationto the foundry subcon, Silan, as the capacity expansion for TrenchFET® Gen-IV Commercial Power MOSFET, SiJH600E & SiR668DP.Silan Microchip Manufacturing Co., Ltd. (Silan) has been a subcontracting partner of Vishay Siliiconix; founded in September 1997 as a high-techenterprise specializing in IC design and the manufacturing of semiconductor microelectronics-related products. In 2018, a wafer production line for 12-inch chips and an advanced compound semiconductor device production line were constructed in Xiamen. Silan has achieved ISO9001, ISO14001,ISO45001, and IATF16949 certifications for quality management systems.Reason for Change: Capacity Expansion
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=en&field2=SIJH600E-T1-GE3&field4=Vishay&field18=https://p1emea.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sijh600e-t1-ge3-vishay-7156277
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=en&field2=SIJH600E-T1-GE3&field4=Vishay&field18=https://p1emea.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sijh600e-t1-ge3-vishay-7156277
Vishay SIJH600E-T1-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 0.92Ω |
| Rated Power Dissipation: | 3.3W |
| Qg Gate Charge: | 212nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Turn-on Delay Time: | 45ns |
| Turn-off Delay Time: | 110ns |
| Rise Time: | 30ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 9950pF |
| Package Style: | POWERPAK-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per Reel
Package Style:
POWERPAK-8
Mounting Method:
Surface Mount