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Manufacturer Part #

SIR404DP-T1-GE3

Single N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR404DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.00225Ω
Rated Power Dissipation: 6.25W
Qg Gate Charge: 97nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 60A
Turn-on Delay Time: 60ns
Turn-off Delay Time: 210ns
Rise Time: 40ns
Fall Time: 50ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: Si
Height - Max: 1.12mm
Length: 6.25mm
Input Capacitance: 8130pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
9,000
Factory Lead Time:
48 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,565.00
USD
Quantity
Unit Price
3,000
$0.855
6,000+
$0.835
Product Variant Information section