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Manufacturer Part #

SIRA99DP-T1-GE3

MOSFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2545
Product Specification Section
Vishay SIRA99DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 1.7mΩ
Rated Power Dissipation: 6.35W
Qg Gate Charge: 172.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 47.9A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 64ns
Rise Time: 19ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 10995pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
6,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
48 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$7,620.00
USD
Quantity
Unit Price
3,000+
$1.27
Product Variant Information section