text.skipToContent text.skipToNavigation

Manufacturer Part #

SIRB40DP-T1-GE3

Dual N-Channel 40 V 3.25 mOhm 46.2 W TrenchFET Gen IV Mosfet-PowerPAK SO-8 Dual

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2547
Product Specification Section
Vishay SIRB40DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.25mΩ
Rated Power Dissipation: 3.5W
Qg Gate Charge: 61.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24.4A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 33ns
Rise Time: 37ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Input Capacitance: 4290pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
33 Weeks
Minimum Order:
6000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,540.00
USD
Quantity
Unit Price
3,000
$0.595
6,000
$0.59
9,000
$0.585
12,000+
$0.58
Product Variant Information section