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Manufacturer Part #

SIS932EDN-T1-GE3

Dual N-Channel 30 V 6 A 2.3 W Surface Mount MOSFET - POWERPAK-1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIS932EDN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 2.6W
Qg Gate Charge: 9.2nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 6A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 32ns
Rise Time: 35ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.4V
Input Capacitance: 1000pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
6,000
Factory Lead Time:
36 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,260.00
USD
Quantity
Unit Price
3,000
$0.215
6,000
$0.21
15,000+
$0.205
Product Variant Information section