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Manufacturer Part #
SISS67DN-T1-GE3
Single P-Channel 30 V 5.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8S
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2512 | ||||||||||
Vishay SISS67DN-T1-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SISS67DN-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/siss67dn-t1-ge3-vishay-4100826
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SISS67DN-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/siss67dn-t1-ge3-vishay-4100826
Vishay SISS67DN-T1-GE3 - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 5.5mΩ |
| Rated Power Dissipation: | 5W |
| Qg Gate Charge: | 74nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 23.8A |
| Turn-on Delay Time: | 20ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 25ns |
| Fall Time: | 18ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.5V |
| Input Capacitance: | 4380pF |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount