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Manufacturer Part #
SPB80P06PGATMA1
Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Infineon SPB80P06PGATMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change informationSubject Transfer of wafer production, wafer test and pre-assembly location to IFX Kulim, and change of wafer diameter from 150 mm to 200 mm, and implementation of new mould compound for PG-TO252 package, for P-Channel Small Signal and Power MOSFETsReason Wafer production, wafer test and pre-assembly location will be transferred according to the global Infineon production strategyDescription Wafer production and wafer test locationWafer diameterPre-assembly location Wafer LotnumberMould compound(PG-TO252)Halogen Free Flag (PG-TO252)OPN incl. SP#(PG-TO252)Production Lot code Marking on device (PG-TO252) Note: See SPCN document for detailed description of changesIntended start of delivery 2026-03-31 or earlier based on customer approval
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SPB80P06PGATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/spb80p06pgatma1-infineon-3060194
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SPB80P06PGATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/spb80p06pgatma1-infineon-3060194
Infineon SPB80P06PGATMA1 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 23mΩ |
| Rated Power Dissipation: | 340|W |
| Qg Gate Charge: | 115nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount