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STMicroelectronics | STB12NM50ND

Manufacturer Part #

STB12NM50ND

N-Channel 550 V 0.38 Ohm Surface Mount FDmesh II Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1747
Product Specification Section
STMicroelectronics STB12NM50ND - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.38Ω
Rated Power Dissipation: 100W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 11A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 40ns
Rise Time: 15ns
Fall Time: 17ns
Gate Source Threshold: 4V
Input Capacitance: 850pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB12NM50ND is a N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET.

FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
10
USA:
10
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1.10
USD
Quantity
Unit Price
1
$1.10
10
$1.07
40
$1.05
150
$1.03
500+
$1.00
Product Variant Information section