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Manufacturer Part #

STB21N65M5

N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 150Ω
Rated Power Dissipation: 125|W
Qg Gate Charge: 50nC
Package Style:  TO-263-3 (D2PAK)
Features & Applications

The STB21N65M5 is a N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • 100% avalanche tested
  • Worldwide best RDS(on) * area
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance

Applications:

  • Switching applications
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Total
$3,200.00
USD
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Quantity
Web Price
1,000
$3.20
2,000+
$2.56
Product Variant Information section