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Manufacturer Part #
STD2HNK60Z-1
N-Channel 600 V 4.8 Ohm SuperMesh Power MosFet - TO-251
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STD2HNK60Z-1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STD2HNK60Z-1&field4=STMicroelectronics&field18=https://p1apac.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/std2hnk60z-1-stmicroelectronics-6011560
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STD2HNK60Z-1&field4=STMicroelectronics&field18=https://p1apac.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/std2hnk60z-1-stmicroelectronics-6011560
STMicroelectronics STD2HNK60Z-1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 4.8Ω |
| Rated Power Dissipation: | 45|W |
| Qg Gate Charge: | 11nC |
| Package Style: | TO-251 (IPAK) |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
75
$0.635
6,000
$0.63
9,000
$0.625
12,000+
$0.62
Product Variant Information section
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)