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STMicroelectronics | STH275N8F7-6AG

Manufacturer Part #

STH275N8F7-6AG

N-Channel 80 V 2.1 mOhm Surface Mount STripFET™ F7 Power MOSFET - H²PAK-6

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STH275N8F7-6AG - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2.1mΩ
Rated Power Dissipation: 315W
Qg Gate Charge: 193nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 56ns
Turn-off Delay Time: 98ns
Rise Time: 180ns
Fall Time: 42ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Height - Max: 4.7mm
Length: 10.4mm
Input Capacitance: 13600pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,760.00
USD
Quantity
Unit Price
1,000
$2.76
2,000
$2.74
3,000+
$2.72
Product Variant Information section