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Manufacturer Part #
STP16NF06
N-Channel 60 V 0.1 Ω 10 nC STripFET™ II MosFet - TO-220
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STP16NF06 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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STMicroelectronics STP16NF06 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 100mΩ |
| Rated Power Dissipation: | 45W |
| Qg Gate Charge: | 10nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 16A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 17ns |
| Rise Time: | 18ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 315pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
The STP16NF06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density or low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features:
- Exceptional dv/dt capability
- Low gate charge at 100°C
- Application oriented characterization
Applications:
- Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
50
$0.355
250
$0.345
1,250
$0.335
5,000
$0.33
12,500+
$0.315
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole