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STMicroelectronics | STP24N60M2

Manufacturer Part #

STP24N60M2

N-Channel 600 V 18 A 150 W Through Hole MDmesh II Plus™ Power MOSFET - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP24N60M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 150W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 18A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 60ns
Rise Time: 9ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 14.9mm
Length: 10.4mm
Input Capacitance: 1060pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
24 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,240.00
USD
Quantity
Unit Price
50
$2.30
200
$2.27
500
$2.24
1,250
$2.22
2,000+
$2.19
Product Variant Information section