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Manufacturer Part #
STP80NF10
N-Channel 100 V 15 mOhm Flange Mount STripFET™ II Power MOSFET - TO-220
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
STMicroelectronics STP80NF10 - Product Specification
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STMicroelectronics STP80NF10 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.015Ω |
| Rated Power Dissipation: | 300W |
| Qg Gate Charge: | 135nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 80A |
| Turn-on Delay Time: | 26ns |
| Turn-off Delay Time: | 116ns |
| Rise Time: | 80ns |
| Fall Time: | 60ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 5500pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
The STP80NF10 is a Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.
Features:
- Exceptional dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
Applications:
- Switching applications
View the Complete family of STP8 Mosfet Transistors
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole