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STMicroelectronics | STS8DN6LF6AG

Manufacturer Part #

STS8DN6LF6AG

Dual N-Channel 60 V 24 mOhm Automotive-Grade STripFET F6 Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STS8DN6LF6AG - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 3.2W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 9.6ns
Turn-off Delay Time: 56ns
Rise Time: 20ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Input Capacitance: 1340pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,337.50
USD
Quantity
Unit Price
2,500
$0.535
5,000
$0.525
10,000
$0.52
12,500+
$0.51
Product Variant Information section