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Diodes Incorporated | ZXMHC6A07N8TC

Manufacturer Part #

ZXMHC6A07N8TC

Quad N/P-Channel 60 V 0.35/0.60 Ohm 3.2/5.1 nC 0.87 mW Silicon Mosfet SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2327
Product Specification Section
Diodes Incorporated ZXMHC6A07N8TC - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 4
Drain-to-Source Voltage [Vdss]: -60V/60V
Drain-Source On Resistance-Max: 0.35Ω/0.6Ω
Rated Power Dissipation: 0.87mW
Qg Gate Charge: 3.2nC/5.1nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: -1.28A/1.8A
Turn-on Delay Time: 1.8ns/1.6ns
Turn-off Delay Time: 4.9ns/13ns
Rise Time: 1.4ns/2.3ns
Fall Time: 2ns/5.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V/3V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 166pF/141pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
105,000
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$962.50
USD
Quantity
Unit Price
2,500+
$0.385
Product Variant Information section