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  6. IMBG120R060M1HXTMA1

Infineon | IMBG120R060M1HXTMA1

Manufacturer Part #

IMBG120R060M1HXTMA1

SiC, 1200V, 36A, 60MOHM, N-CHANNEL, PG-TO263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMBG120R060M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 36A
Input Capacitance: 1145pF
Power Dissipation: 181W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$4,610.00
USD
Quantity
Unit Price
1,000+
$4.61
Product Variant Information section