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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMBG120R116M2HXTMA1

Infineon | IMBG120R116M2HXTMA1

Manufacturer Part #

IMBG120R116M2HXTMA1

CoolSiC Series 1200 V 21.2 A 115.7 mOhm Single N-Channel SiC MOSFET - TO-263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2322
Product Specification Section
Infineon IMBG120R116M2HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 21.2A
Input Capacitance: 500pF
Power Dissipation: 123W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
15
USA:
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$4.28
USD
Quantity
Unit Price
1
$4.28
10
$3.88
40
$3.64
150
$3.41
500+
$3.20
Product Variant Information section