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  6. IMBG120R350M1HXTMA1

Infineon | IMBG120R350M1HXTMA1

Manufacturer Part #

IMBG120R350M1HXTMA1

CoolSiC Series N-Channel 1200V 4.7A 468mOhm 5.9 nC 65W 196 pF SiC PG-TO263-7-12

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2326
Product Specification Section
Infineon IMBG120R350M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 4.7A
Input Capacitance: 196pF
Power Dissipation: 65W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,090.00
USD
Quantity
Unit Price
1,000+
$2.09
Product Variant Information section