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Manufacturer Part #
IMBG65R022M1HXTMA1
IMBG65 Series N-Channel 650 V 64A 300W SMD Silicon Carbide MOSFET TO-263-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:D2PAK-7 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2445 | ||||||||||
Infineon IMBG65R022M1HXTMA1 - Product Specification
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Subject CoolSiCTM 650V G1 SiC datasheets revision updatesReason: (1) Naming and nomenclature update according to IEC 60747-8 Amd.1 Ed.3.03 from 2020(2) Update Tj,max from 150°C to 175°C for the following products:IMW65R027M1H, IMW65R048M1H,IMW65R072M1H,IMW65R107M1H,IMZA65R027M1H, IMZA65R048M1H,IMZA65R072M1H and IMZA65R107M1H(3) Extend the VGS(static) and VGS(dynamic) specs of products reported in Table 1 in TO247-3pin and TO247-4pin package.(4) Datasheet template harmonization with respect to CoolSiCTM MOSFET 650V G2
Part Status:
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Infineon IMBG65R022M1HXTMA1 - Technical Attributes
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain Current: | 64A |
| Input Capacitance: | 2288pF |
| Power Dissipation: | 300W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | D2PAK-7 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
D2PAK-7
Mounting Method:
Surface Mount