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  6. IMBG65R072M1HXTMA1

Infineon | IMBG65R072M1HXTMA1

Manufacturer Part #

IMBG65R072M1HXTMA1

IMBG65 Series N-Channel 650 V 33A 140W SMD Silicon Carbide MOSFET TO-263-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2247
Product Specification Section
Infineon IMBG65R072M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 33A
Input Capacitance: 744pF
Power Dissipation: 140W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,150.00
USD
Quantity
Unit Price
1,000+
$3.15
Product Variant Information section