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  6. IMBG65R083M1HXTMA1

Infineon | IMBG65R083M1HXTMA1

Manufacturer Part #

IMBG65R083M1HXTMA1

IMBG65 Series N-Channel 650 V 28A 126W SMD Silicon Carbide MOSFET TO-263-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2449
Product Specification Section
Infineon IMBG65R083M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiC (Silicon Carbide) Schottky
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 28A
Input Capacitance: 624pF
Power Dissipation: 126W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,870.00
USD
Quantity
Unit Price
1,000+
$2.87
Product Variant Information section