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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMYH200R012M1HXKSA1

Infineon | IMYH200R012M1HXKSA1

Manufacturer Part #

IMYH200R012M1HXKSA1

CoolSiC 2000 V SiC Trench MOSFET

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2548
Product Specification Section
Infineon IMYH200R012M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 2000V
Drain Current: 123A
Input Capacitance: 9700pF
Power Dissipation: 552W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$1,722.60
USD
Quantity
Unit Price
30
$57.42
60
$57.08
90
$56.88
120
$56.74
150+
$56.30
Product Variant Information section