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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMYH200R024M1HXKSA1

Infineon | IMYH200R024M1HXKSA1

Manufacturer Part #

IMYH200R024M1HXKSA1

CoolSiC Series 2000 V 89 A 33 mOhm Single N-Channel SiC Trench MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMYH200R024M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 2kV
Drain Current: 89A
Input Capacitance: 4850pF
Power Dissipation: 576W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
120
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$6,794.40
USD
Quantity
Unit Price
30
$28.88
60
$28.71
90
$28.61
120
$28.54
150+
$28.31
Product Variant Information section