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Manufacturer Part #
NTH4L020N090SC1
N-Channel 900 V 116 A 484 W Through Hole Silicon Carbide MOSFET - TO-247-4L
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:450 per Package Style:TO-247-4 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2249 | ||||||||||
Product Specification Section
onsemi NTH4L020N090SC1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi NTH4L020N090SC1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 900V |
| Drain Current: | 116A |
| Input Capacitance: | 4415pF |
| Power Dissipation: | 484W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-247-4 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
45
Germany:
45
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
450+
$16.47
Product Variant Information section
Available Packaging
Package Qty:
450 per
Package Style:
TO-247-4
Mounting Method:
Through Hole