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onsemi | NTH4L028N170M1

Manufacturer Part #

NTH4L028N170M1

N-Channel 1700 V 81 A 535 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2410
Product Specification Section
onsemi NTH4L028N170M1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 81A
Input Capacitance: 4230pF
Power Dissipation: 535W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
111
USA:
111
On Order:
0
Factory Stock:Factory Stock:
9,900
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$26.81
USD
Quantity
Unit Price
1
$26.81
5
$26.46
25
$26.12
50
$25.97
150+
$25.53
Product Variant Information section