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onsemi | NTH4L070N120M3S

Manufacturer Part #

NTH4L070N120M3S

N-Channel 1200 V 34 A 160 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2324
Product Specification Section
onsemi NTH4L070N120M3S - Technical Attributes
Attributes Table
Technology: SiC (Silicon Carbide) Schottky
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2kV
Drain Current: 37A
Input Capacitance: 1230pF
Power Dissipation: 252W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,993.50
USD
Quantity
Unit Price
450
$4.43
900
$4.39
1,350
$4.37
1,800+
$4.34
Product Variant Information section