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Manufacturer Part #
SCTW90N65G2V
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1 per Bulk Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2431 | ||||||||||
Product Specification Section
STMicroelectronics SCTW90N65G2V - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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STMicroelectronics SCTW90N65G2V - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain Current: | 119A |
| Input Capacitance: | 3380pF |
| Power Dissipation: | 565W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
10
Germany:
10
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
1
$16.75
5
$16.52
20
$16.32
50
$16.20
125+
$15.95
Product Variant Information section
Available Packaging
Package Qty:
1 per Bulk
Package Style:
TO-247-3
Mounting Method:
Through Hole