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Infineon | SPB21N50C3ATMA1

Manufacturer Part #

SPB21N50C3ATMA1

560V, 21A, 0.19MOHM, N-CH, PG-TO263

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon SPB21N50C3ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 208W
Qg Gate Charge: 95nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 67ns
Rise Time: 5ns
Fall Time: 4.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 2400pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,440.00
USD
Quantity
Unit Price
1,000
$1.44
2,000
$1.43
3,000
$1.42
5,000+
$1.41
Product Variant Information section